Inner wall shield for a process chamber for manufacturing semiconductors



FIG. 1 atop/left-side/rear perspective view of a first embodiment of aninner wall shield for a process chamber for manufacturingsemiconductors;

FIG. 2 a front elevational view thereof;

FIG. 3 a rear elevational view thereof;

FIG. 4 a right side elevational view thereof;

FIG. 5 a left side elevational view thereof;

FIG. 6 a top plan view thereof;

FIG. 7 a bottom plan view thereof;

FIG. 8 a cross-sectional view thereof taken along line 8—8 in FIG. 2;

FIG. 9 a cross-sectional view there taken along line 9—9 in FIG. 4

FIG. 10 an enlarged view of a right-end portion of FIG. 9.

FIG. 11 a top/left-side/rear perspective view of a second embodiment ofan inner wall shield for a process chamber for manufacturingsemiconductors;

FIG. 12 a front elevational vie thereof;

FIG. 13 a rear elevational view thereof;

FIG. 14 a right side elevational view thereof;

FIG. 15 a left side elevational view thereof;

FIG. 16 a top plan view thereof;

FIG. 17 a bottom plan view thereof;

FIG. 18 a cross-sectional view taken alone line 8—8 in FIG. 2;

FIG. 19 a cross-sectional view taken along 9—9 in FIG. 4; and,

FIG. 20 an enlarged view taken along line 10—10 in FIG. 9.

The inner wall shield for a process chamber for manufacturingsemiconductors is typically attached along the inner wall of the processchamber of an etching device. When sufficient high frequency power isconnected to upper and lower electrodes of the process chamber, plasmais generated between the electrodes and the inner wall shield preventsthe plasma from damaging the inner wall of the process chamber. One ormore of the five small circles in one or more of the cross patternsshown in FIGS. 1, 3, 3 and 4 (two patterns), for example, are throughholes that are disclaimed in other embodiments (not shown). The outerdiameters of the embodiments are preferably about 670 mm, the height ofthe first embodiment is preferably about 110 mm and the height of thesecond embodiment is preferably about 150 mm.

I claim the ornamental design for inner wall shield for a processchamber for manufacturing semiconductors, as shown and described.